Determination of Optimal Rapid Thermal Annealing Exposure Time and Pulse Rising Rate for Minimum Impurity Redistribution

Abstract

ABSTRACTA simple relationship for rapid thermal annealing exposure time for the case of annealing of boron and arsenic high dose shallow implants is found from first principles. The percentage of redistribution is found to be intrinsically dependent on exposure time and rate of temperature rise in the heat pulse. An upper bound of pulse rising rate for a given percentage tolerance in redistribution is also found. Extensive SIMS analysis shows very good agreement of these formulae with experimental data.