Author:
Pakfar Ardechir,Holliger Philippe,Poncet Alain,Fellous Cyril,Dutartre Didier,Schwartzmann Thierry,Jaouen Hervé
Abstract
ABSTRACTA unified diffusion model is developed, valid for all usual substitutional atoms in SiGe and strained SiGeC layers, in accordance with all published experimental data and predicting the enhancement of Arsenic diffusion in SiGe and SiGeC strained layers. Using a new SIMS methodology, the study of As intrinsic diffusion in SiGe and SiGeC layers is performed, at low concentration and under equilibrium annealing conditions. Arsenic diffusivity in fully-strained SiGe and SiGeC layers on Si substrates was successfully compared to the unified diffusion model.
Publisher
Springer Science and Business Media LLC