1. 14 Thompson M.O. , 1984, op. cit.
2. 11 This depth deficit is the difference between the actual melt depth and the melt depth which would have been achieved without a velocity transient -- i.e., if the 1-Si temperature attained its steady state value immediately after the interface passed from a-Si to c-Si.
3. 10 Note also that if the melting velocity is rapid, the heat flow into the underlying solid can be neglected, as discussed in Thompson M.O. , Liquid-Solid Interface Dynamics During Pulsed Laser Melting of Silicon-on-Sapphire (Ph.D thesis, Cornell University, 1984), pp. 105–109.
4. Melt dynamics of silicon‐on‐sapphire during pulsed laser annealing
5. Nanosecond resolution time-resolved x-ray study of silicon during pulsed-laser irradiation