Author:
Linnros Jan,Brown W. L.,Elliman R. G.
Abstract
ABSTRACTThe ion-bombardment-induced movement of an amorphous/crystalline interface in silicon has been studied under pulsed beam conditions. Irradiations were performed with a 1.5 MeV Xe beam at temperatures of 200–300°C which induced a planar motion of the interface, either to epitaxially crystallize the amorphous material or to planar amorphize the crystalline material. It is found that at a fixed peak and average beam current the result of pulsed irradiation can vary from amorphization at low pulse repetition frequency to crystallization at high pulse repetition frequency. The frequency which characterizes this change in behavior is virtually temperature independent but strongly dependent on peak beam flux.
Publisher
Springer Science and Business Media LLC
Cited by
11 articles.
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