Nmos Transistors Fabricated by Simultaneous Laser-Assisted Crystallization and Diffusion on Silicon on Electro-Optic PLZT

Abstract

ABSTRACTSimultaneous CW laser assisted crystallization and diffusion for fabricating NMOS transistors on Si/SiO2/PLZT is presented. Hall effect measurement (mobility 74cm2V−1sec×1019cm−3 of phosphorus dopping), crystal delineation (grain size 50×30μm) and Raman spectroscopy (stress 6.0×109dynescm−2) indicated that good quality doped silicon crystal film can be produced with this method. NMOS transistors fabricated by this technology show good performances such as high breakdown voltage (45 V), small leakage current (2 nA/μm), reasonable channel carrier mobility (140cm2V−1−1) and photosensitivity (1.5 A/W).