Imaging Transfer Devices Operated by PSD Mode a-Si P-I-N Junctions

Author:

Yamaguchi M.,Murakami S.,Todo S.,Tawada Y.

Abstract

ABSTRACTTwo types of position sensitive device (PSD) using a-Si:H thin films have been developed. One has been produced by large area plasma CVD, with usual metal deposition techniques. The other is the application of a linear image sensor as a one dimensional position sensor. There are some advantages and disadvantages in these two types of position sensitive device. Resolution of the linear image sensor is limited by the size of the elements and the pitch; in contrast, uniformity of the electrodes on the p-i-n diode and thickness of the a-Si thin film are the key factors for the resolution of one and two dimensional analogue PSDs.The analogue PSD is applicable to a digitizer which takes the role of a man-machine (computer) interface. The large area two dimensional digitizer was fabricated using the same technique as large area solar cell production, and was shown to be useful as a drawing tool on a CRT or other display devices with the aid of a micro-computer.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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