Strain Mapping in InGaAsP Epitaxial Films by An X-Ray Diffraction Technique
-
Published:1985
Issue:
Volume:54
Page:
-
ISSN:0272-9172
-
Container-title:MRS Proceedings
-
language:en
-
Short-container-title:MRS Proc.
Author:
Chaudhuri Jharna,Mayo William E.,Weissmann Sigmund
Abstract
ABSTRACTA new x-ray diffraction method is developed to determine the full elastic strain tensor and its distribution about a strain center in single crystal materials. It is based on the recently developed Computer Aided Rocking Curve Analyzer and is particularly well suited for analysis of thin film structures common to electronic materials. This technique will be described in detail, and its application in measuring the non-uniform strains in InGaAsP epitaxial film on InP substrate will be presented. Also, possibility of using this method to measure the uniformity of film thickness will be discussed.
Publisher
Springer Science and Business Media LLC
Subject
General Engineering
Reference20 articles.
1. 19. Mayo W.E. , Chaudhuri J. , Weissmann S. , Metals/Materials Technology Series, 1983, ASM Symposia on Non-destructive Evaluations.
2. Feedback Control Scheme for Scanning X‐Ray Topography