Preparation of Zinc Oxide Films by Low-Pressure Chemical Vapor Deposition Method

Abstract

AbstractZnO and Al-doped ZnO films prepared using a low-pressure chemical vapor deposition (LP-CVD) method were studied. The films were prepared on fused quartz substrates using bis(2,4-pentanedionato)zinc and tris(2,4-pentanedionato)aluminum which are inexpensive and stable source materials. The highly c-axis oriented ZnO films were grown on the substrates above 500°C. The minimum electrical resistivity of ρ=6.5×10−5Ωm was obtained for the ZnO film, and of ρ = 3.5×10−5Ωm was obtained for the ZnO:Al film.