Author:
Spooner Marc G.,Walsh Timothy M.,Elliman Robert G.
Abstract
Abstractptical microcavity structures containing Si nanocrystals are fabricated by plasma enhanced chemical vapour deposition (PECVD) of SiO2, Si3N4 and SiOx layers. The nanocrystals are formed within Si-rich oxide layers (SiOx) by precipitation and growth, and the microcavity structures defined by two parallel distributed Bragg mirrors (DBM) made from either alternate SiO2/Si3N4 layers or alternate SiO2/SiOx layers. In the latter case, Si nanocrystal layers form part of the DBM structure thereby providing a distributed emission source. The optical emission from these and related structures are examined and compared with that from isolated nanocrystal layers.
Publisher
Springer Science and Business Media LLC
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Silicon-Based Light Sources;Handbook of Silicon Photonics;2013-04-09
2. Synthesis of nickel disilicide quantum dots in silicon dioxide films;Colloids and Surfaces A: Physicochemical and Engineering Aspects;2008-02
3. Stress and stress relief in dielectric thin films – the role of hydrogen;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08
4. Direct growth of nickel disilicide nanocrystals in silicon dioxide films;Journal of Applied Physics;2006-06