Thermo-Electric Performance of poly-Si0.7Ge0.3

Abstract

AbstractThe performance of poly-Si0.7Ge0.3 as a thermo-electric material that is fully process compatible with IC fabrication in silicon been fully analyzed and characterized. The application is in on-chip thermal stabilization of a micromachined platform in silicon. A Seebeck coefficient α= -174 μV/K and a figure of merit z= 0.173 has been obtained for n-type material. Measurements indicate a cooling capability of 2.1 K below ambient temperature.