Influence of Preparation Conditions on Charge Carrier Dynamics In a-Si:H Determined By An In-Siju Technique

Abstract

ABSTRACTContactless photoconductivity measurements with the time-resolved microwave conductivity technique have been performed during the growth of hydrogenated amorphous silicon films. it has been shown that low substrate temperature and thin films lead to a larger electron decay rate and to an increased infrared absorption compared with high quality films. Addition of H2S to SiH4 during the glow discharge process leads to a worse fi1m quality which can be detected in-situ.