Electronic Transport and the Density of States Distribution in a-(Si, Ge):H, F Alloys

Author:

Aljishi S.,Smith Z E.,Slobodin D.,Kolodzey J.,Chu V.,Schwarz R.,Wagner S.

Abstract

ABSTRACTThe electronic and optical properties of amorphous silicon-germanium alloys produced by d.c. and r.f. glow discharge are reported. Data on the sub-gap absorption, dark and photo conductivities, drift mobilities and drift mobility-lifetime products are used to propose a density of states model.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference27 articles.

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3. Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy

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