Author:
Wang Zhongze,Kwan Siu L.,Pearsall T. P.,Booth James,Beard Barrett T.,Johnson Shane R.
Abstract
AbstractWe demonstrate the use of diffuse reflectance spectroscopy as a non-invasive probe for measurement of temperature in real time on Si and GaAs substrates during semiconductor processing. Our results show that the standard deviation of the non-invasive optical technique is less than 0.7 °C for GaAs over the temperature range 50 °C < T< 600 °C with 5-second updates. These results support the notion that non-invasive optical temperature measurement can be used in semiconductor processing with a precision exceeding that of a thermocouple.
Publisher
Springer Science and Business Media LLC