New Type of Superlattice: An Epitaxial Semiconductor-Atomic Superlattice, SAS

Author:

Tsu Raphael

Abstract

ABSTRACTConventional superlattices are formed with repeating a basic period consisting of a heterojunction between two materials. A new type of superlattice are formed by replacing the heterojunction between adjacent semiconductors with semiconductor layers separated by adsorbed species such as oxygen atoms; and CO, molecules, etc. This new type of superlattice, SAS, semiconductor-atomic-superlattice, fabricated epitaxially, enriches the present class of heterojunction superlattices and quantum wells for quantum devices. The Si growth beyond the adsorbed monolayer of oxygen is epitaxial with fairly low defect density. At present, such a structure shows stable electroluminescence and insulating behavior, useful for optoelectronic and SOI (silicon-on-insulator) applications. SAS may form the basis of future all silicon ‘superchip’ with both electrons and photons.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Semiconductor Atomic Superlattice (SAS);Superlattice to Nanoelectronics;2011

2. Nanostructured Electronics and Optoelectronic Materials;Nanostructured Materials;2007

3. Semiconductor Atomic Superlattice (SAS);Superlattice to Nanoelectronics;2005

4. Disorder Characterization of Oxide/Silicon Interfaces from I-V Curves;MRS Proceedings;2003

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