Two-layer Model for Electroabsorption and Built-in Potential Measurements on a-Si:H pin Solar Cells

Abstract

AbstractModulated Electroabsorption (EA) measurements have been widely used to estimate built-in potentials (Vbi) in semiconductor devices. The method is particularly simple in devices for which the built-in potential is dropped in a single layer of the device. However, experimental results in amorphous silicon and organic devices can involve at least 2 layers. In the present paper we consider the information which can be obtained about 2-layer semiconductor devices from electroabsorption measurements. In particular we describe a 2-layer EA model appropriate to a-Si:H based pin solar cells, for which both the p+ and i layers contribute to the EA signal. We present an analysis of capacitance and second harmonic measurements which yields the EA coefficient for the p+ layer of the device, and we present measurements on a-Si:H pin devices which appear consistent with this analysis. Wavelength dependent EA then yields the built-in potential across the 2-layer device.