Author:
Yoshino K.,Futako W.,Wasai Y.,Shimizu I.
Abstract
AbstractHigh quality wide gap hydrogenated amorphous silicon has been prepared using the chemical annealing technique. It was possible to prepare materials with band gaps ranging 1.8 to 2.1 eV by varying the preparation parameters. Low defect densities less than (3–8) x 1015 cm-3 could be maintained over the entire band gap range. Improved stability for light soaking was also observed in the wide gap materials.
Publisher
Springer Science and Business Media LLC
Cited by
12 articles.
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