Kinetics of Both Defects and Electron and Hole Diffusion Lengths During Light-Soaking in a-Si:H Films-Reference-Cited by-同舟云学术

Kinetics of Both Defects and Electron and Hole Diffusion Lengths During Light-Soaking in a-Si:H Films

Published:1996 Issue: Volume:420 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Abramov A. S.,Kosarev A. I.,Cabarrocas P. Roca i,Vinogradov A. J.

Abstract

AbstractConcomitant studies of kinetics of defects ND(t), photoconductivity σph(t), electron and hole diffision lengths Le(t), Lh(t) during light soaking have been carried out. The data have been fitted by stretched exponential expressions and characteristic parameters of kinetics have been determined. Correlation between the kinetics is discussed. In contrast to Nd(t), σph(t) and Le(t), the hole diffusion length Lh(t) was observed to remain constant during initial time (˜ 103s) and then decreased with characteri stic time ˜ 104s.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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