Magnetooptic Waveguide Material Structures and Devices

Abstract

AbstractRecent advances in the techniques for preparation of Ce-doped yttrium iron garnet (YIG) films on gadolinium gallium garnet (GGG) and semiconductor substrates, hybrid material structures of YIG/GGG- gallium arsenide (GaAs) combination, and the resulting microwave and guided-wave magnetooptic (MO) devices are presented. For example, high-efficiency MO Bragg cell modulators using the YIG/GGG-alumina material structure have been realized using a non-uniform bias magnetic field as well as an electronic feedback. Such MO modulators are being used to construct integrated optic devices such as optical scanners, switches, and frequency shifters. Also, a wideband microwave bandstop filter with a carrier frequency tuning range as high as 2.5 to 23.0 GHz using the YIG/GGG-GaAs material structure has been realized. The same material structure can be employed to perform MO Bragg diffraction experiment at ultrahigh carrier frequencies.