Epitaxial CoSi2 Film Formation on (100) Si by Annealing of Co/Ti/Si Structure in N2

Abstract

AbstractCoSi2 was formed by annealing a multilayer strucure of sputter deposited Co / Ti / Si. The Ti was 1, 2 or 5 nm thick and the Co was 15 nm thick. The morphology of both the surface and the CoSi2 / Si interface was examined. For the sample that had 2 nm Ti layer, an epitaxial CoSi2 was formed with both a planar surface and a planar CoSi2 / Si interface. An amorphous Ti-Si-O layer was initially formed between the Co and the Si. Co then diffused through this layer and directly formed epitaxial CoSi2 on the Si<100>. No intermediate silicide phases of Co were observed.