Author:
Komuro Matahiro,Hoshiya Hiroyuki,Mitsuoka Katsuya,Kozono Yuzoo,Hanazono Masanobu,Sugita Yutaka
Abstract
Fe-N films with thicknesses of 500–1000 Å have been epitaxially grown on lno-2 Gao-e As(001) substrates using MBE system. Deposition atmosphere was N2 + 20%NH3. and pressure during deposition was around 1 × 10−4 Torr. Two electron guns were used in order to control nitrogen concentration of 11 at% in Fe-N films. When substrate temperature was 150 °C, an Fe1 eN2 single crystal films were found to be formed after annealing at 150 °C. When the substrate temperature was around 300 °C, Fe1 eN2. films were grown epitaxial ly on lno-2 Gao-3 As without annealing, while Fe1 eN2 could not be grown at substrate temperature higher than 350 °C because of the formation of Fe2 As caused by the reaction between substrate and Fe–N films. RHEED and XRD patterns showed that Fe1 eN2 films was grown epitaxial ly and crystal orientation of Fe1 eN2 films are Fe1 eN2 (001)//lno-2 Gaoo-eAs(001) and Fe1 eN2 [100]//lno-2 Gaoo-e As [100]. Saturation magnetic flux density of Fe1 eN2 is 2.8˜3.0T.
Publisher
Springer Science and Business Media LLC
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