Silicon Nanowires: Doping Dependent N- and P- Channel Fet Behavior-Reference-Cited by-同舟云学术

Silicon Nanowires: Doping Dependent N- and P- Channel Fet Behavior

Published:2004 Issue: Volume:832 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Byon Kumhyo,Fischer John E.,Adu Kofi W.,Eklund Peter. C.

Abstract

ABSTRACTThe electrical transport properties of field effect transistor (FET) devices made of silicon nanowires (SiNWs) synthesized by pulsed laser vaporization (PLV) were studied. From as-grown PLV-SiNW FET, we found p-channel FET behavior with low conductance. To improve conductance, spin on glass (SOG) and vapor doping were used to dope phosphorus and indium into SiNW, respectively. From doping after synthesis, we could successfully make both n- and p-channel FET devices.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference10 articles.

1. Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect Transistors

2. Indium doping of silicon using an evaporated indium film source

3. Phosphorus diffusion into silicon from a spin‐on source using rapid thermal processing

4. Imaging, structural, and chemical analysis of silicon nanowires

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