Author:
Williams J. S.,Petravic M.,Conway M.,Fu L.,Chivers D. J.
Abstract
ABSTRACTThis study compares oxide and nitride formation during oxygen and nitrogen bombardment of Si. Ion bombardment is carried out both in a SIMS machine and in a conventional implanter at various temperatures. Stoichiometric SiO2 and slightly N-rich Si3N4 are formed during bombardment even at cryogenic temperatures. Implanted metals were found to have a strong tendency to be segregated at a moving Si-SiO2 interface during oxygen bombardment but little segregation is observed at a Si-Si3N4 interface.
Publisher
Springer Science and Business Media LLC