Argon-surface interactions in ibad-deposited molybdenum films

Abstract

ABSTRACTArgon incorporation and defect creation were studied experimentally. Direct desorption measurements have been used to establish the argon implantation profile. A projected range and range straggle of 0.8 and 3.5 Å were found. Argon is incorporated at substitutional positions. The creation rate of defects by argon was studied by helium desorption spectrometry. A net creation rate of (0.7 ± 0.4) × 10−3 vacancy/argon atom was found. Ion assisted deposition at elevated substrate temperatures shows that all incorporated argon acts as helium trap. Argon fluence variations show an effective cross-section for self sputtering of 31 Å2, a trapping probability of 6.5%, and a maximum achievable argon concentration of 4 × 10−3