Author:
Wuyts K.,Langouche G.,Vanderstraeten H.,Silverans R.E.,Van Hove M.,Van Rossum M.,Münder H.,Lüth H.
Abstract
ABSTRACTAlloyed Au/Te/n–GaAs ohmic contacts, with contact resistivities comparable to those of the AuGe device standard, have been developed and studied by Mässbauer spectroscopy, Raman scattering and X-Ray Diffraction. The formation of Au-doped Ga2Te3 crystallites, grown epitaxially on a defectively GaAs surface was observed. No evidence for the formation of an n++–GaAs surface layer could be derived. The interpretation of all experimental results leads to a description of the ohmic conduction mechanism based on a resonant tunneling process assisted by defect/impurity related deep levels through low barrier metal/Te/(Au)Ga2Te3/GaAs interfaces
Publisher
Springer Science and Business Media LLC
Reference16 articles.
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2. Site Occupation of Implanted Te in Gaas As a Function of Implantation Dose
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