Photoluminescence Induced by 6.4 eV Photons in High Purity Silica-Reference-Cited by-同舟云学术

Photoluminescence Induced by 6.4 eV Photons in High Purity Silica

Published:1989 Issue: Volume:172 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Tsai T. E.,Lin H. B.

Abstract

Abstractphotoluminescence in the visible range in high purity silica rods at room temperature was studied using 6.4 eV photons as the excitation source. Electron spin resonance (ESR) was used to monitor the induced paramagnetic centers. Broad luminescence bands at 2.7 eV, 2.2 eV and 1.9 eV were observed. The relative intensities of these bands were found to be intensity dependent. The fluence dependence of these bands were also studied. The results are discussed in relationship to the excitonic mechanism for defect generation in silica.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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