Abstract
ABSTRACTThe review of results of KPR, ODMR, RBS and PL investigations of the III-V semiconductors doped with rare-earth elements is represented. The possible sites of RE related centers in hostare discussed. The possible mechanism of excitation of intrashell f-f transitions is considered. The simple theoretical model of the substitutional RE center in a binary semiconductors is discussed.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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