Author:
Russell P.E.,Herrington C.R.,Burke D.E.,Holloway P.H.
Abstract
ABSTRACTThe effects of heat treatment at temperatures appropriate for solar cell device fabrication on grain boundaries in cast poicrystalline silicon have been studied. An MIS device structure using a 200° C heating was used for fabricating test devices on heat treated samples for EBIC studies. Grain boundary effective surface recombination velocities (Seffgb ) and effective mid-grain diffusion lengths were measured. Seffgb was found to increase after heat treatment. Segregation of oxygen to grain boundaries has been observed in heat treated samples.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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1. Status of Ion-Implanted Silicon Solar Cells;Fourth E.C. Photovoltaic Solar Energy Conference;1982