Author:
Epler J. E.,Chung H. F.,Treat D. W.,Paoli T. L.
Abstract
ABSTRACTLaser-assisted crystal growth experiments have been performed in an upflow vertical metalorganic chemical vapor deposition reactor. An Ar+ laser (514.5 nm) is used to locally heat and photo-excite the surface adlayer during growth. The laser irradiation is observed to enhance the growth rate and Al composition of AlGaAs if the substrate temperature is ˜580 °C. The laser-grown AlGaAs epitaxy is single crystal with good surface morphology and is used to fabricate multiple wavelength light emitting diodes.
Publisher
Springer Science and Business Media LLC