Monolithic GaAs/Si Integration-Reference-Cited by-同舟云学术

Monolithic GaAs/Si Integration

Published:1988 Issue: Volume:126 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Turner George W.,Choi H. K.,Mattia J. P.,Chen C. L.,Eglash S. J.,Tsaur B-Y.

Abstract

ABSTRACTThe recent demonstrations of room-temperature cw operation of diode lasers fabricated in GaAs/AlGaAs layers grown on Si wafers have encouraged efforts to develop monolithic GaAs/Si integration technology for applications such as optical interconnects between VLSI subsystems. This paper summarizes our current work in this area, which is focused on the development of a highspeed, MSI-scale monolithic GaAs/Si test chip that integrates Si MOSFET circuits with diode lasers, LEDs, photoconductive detectors, and MESFET logic circuits fabricated in GaAs/AlGaAs layers grown by molecular beam epitaxy. Growth issues and processing considerations that affect device and circuit performance are addressed, and the characteristics of LEDs monolithically integrated with Si driver circuits and of GaAs microwave MESFETs fabricated on high-resistivity Si substrates are reported.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference17 articles.

1. X-Band MMIC amplifier on GaAs/Si

2. [13] W.-Tu-rner G. , Fall Meeting, The Metallurgical Society, Cincinnati, OH, October 1987.

3. Monolithic integration of Si MOSFET's and GaAs MESFET's

4. [8] Chen H. Z. , Ghaffari A. , Wang H. , Morkoç H. , and Yariv A. , GaAs on Si Workshop, Marina Del Ray, CA, June 1987.

5. [10] Choi Rt. K. , Turner G. W. , and Tsaur B-Y. (unpublished). The measured delay per stage was 220 ps at a power dissipation of 1 mW/stage.