Author:
Kao Y.J.,Haegel N.M.,Hobson W.S.
Abstract
AbstractPhotoluminescence excitation spectra have been obtained at 4.2 K for the characteristic V3+ intra-center emission (0.65 – 0.75 eV) of MOCVD-grown GaAs:V. Oscillatory structure of the PLE spectrum with above-band-edge excitation has been observed in GaAs:V for the first time. The oscillatory period is found to be 41.3 ± 0.5 meV, corresponding to , and is due to energy relaxation of conduction band electrons through LO phonon emission. Our results suggest capture by a shallow donor as an intermediate step in the luminescence from the V center.
Publisher
Springer Science and Business Media LLC