Annealing of Ion Implanted Tin in Silicon: a RBS/ Channeling, Mössbauer Spectroscopy and Tem Investigation of Solubility and Residual Defects.-Reference-Cited by-同舟云学术

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Annealing of Ion Implanted Tin in Silicon: a RBS/ Channeling, Mössbauer Spectroscopy and Tem Investigation of Solubility and Residual Defects.

Published:1989 Issue: Volume:163 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Kringhøj P.,Nylandsted Larsen A.,Petersen J. W.

Abstract

AbstractBy combining RBS/channeling, Mössbauer spectroscopy, and TEM measurements on implanted Sn in Silicon, the solid solubility has been determined at 1025°C, 1075°C, and 1188°C to be respectively, 6.1 , 4.8 , 3.1·1020 cm-3.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference9 articles.

1. Mössbauer Effect Data Index

2. Diffusion of Tin into Silicon

3. Boron implantation into silicon amorphized by tin implantation

4. On the temperature-dependence of the distribution coefficient

5. Annealing Behaviour of High Concentration of Sn and Sb Implanted in Silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. IR laser-induced CVD of β-Sn/SnSi-nanodisperse alloys from stannane–silane mixture;Journal of Analytical and Applied Pyrolysis;2009-11

2. Diffusion of ion implanted Sn in Si, Si1−xGex, and Ge;Applied Physics Letters;1994-07-18

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