Carbon Rich a-Si1-xCx:H Films: An Investigation On Radiative Recombination Properties

Abstract

ABSTRACTAmorphous silicon-carbon a-Sil-xCx:H films with x in the range 0.3-1 have been deposited by PECVD of SiH4+CH4 and SiH4+C2H2 gas mixtures. Photoluminescence characterizations have been performed, together with optical measurements. The dependence of radiative recombination properties as a function of x and as a function of damage introduced by H+-ion irradiation has been presented and correlated with the changes in the absorption spectra.