MBE Growth of Artificially-Layered Magnetic Metal Structures on Semiconductors-Reference-Cited by-同舟云学术

MBE Growth of Artificially-Layered Magnetic Metal Structures on Semiconductors

Published:1990 Issue: Volume:187 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Farrow R.F.C.,Lee C.H.

Abstract

AbstractIn this review, recent developments in MBE growth of artificially-layered magnetic metal structures on semiconductor substrates are considered. It is seen that the ability to seed specific orientations of such structures and to probe their structural and chemical properties with a variety of in situ probes are key advantages of MBE over more conventional deposition techniques.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference26 articles.

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3. Structural study of the epitaxial growth of fcc-Fe films, sandwiches, and superlattices on Cu(100)

4. Angle-resolved x-ray photoelectron spectroscopy

5. Crystallographic structure and magnetism of Co‐Pd and Co‐Pt films with an artificially layered structure

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1. Microstructure and magnetic anisotropy of ultrathin Co/Pt multilayers grown on GaAs (1̄1̄1̄) by molecular‐beam epitaxy;Journal of Applied Physics;1992-12-15