Use of μ-Si:H Wide Band Gap N- and P-Type Materials for Producing Solar Cells by a TCDDC System
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering
Reference6 articles.
1. Effects of U.V. light on the transport properties of a-Si : H films during their growth
2. Solar cells using discharge-produced amorphous silicon
3. Hydrogenated amorphous silicon carbide as a window material for high efficiency a-Si solar cells
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of chamber pressure on p-type μc-SiC:H thin films prepared by photo-CVD;Thin Solid Films;1997-02
2. Influence of boron doping and hydrogen dilution onp‐type microcrystalline silicon carbide thin films prepared by photochemical vapor deposition;Journal of Applied Physics;1995-09
3. Highly conductive p-type microcrystalline silicon carbide prepared by photochemical vapour deposition;Journal of Materials Science Letters;1995
4. The Structure and Composition of Doped Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques;MRS Proceedings;1994
5. Influence of doping on the structural and optoelectronic properties of amorphous and microcrystalline silicon carbide;Journal of Applied Physics;1992-08-15
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