The Optoelectronic Properties of a-Si, Ge:H(F) Alloys)
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Hydrogen-bonding configuration effects on the optoelectronic properties of glow discharge a-Si1−xGex:H with largex;Journal of Physics: Condensed Matter;2007-08-08
2. Improving narrow bandgap a-SiGe:H alloys grown by hot-wire chemical vapor deposition;Thin Solid Films;2003-04
3. Techniques for measuring the composition of hydrogenated amorphous silicon–germanium alloys;Journal of Non-Crystalline Solids;2000-05
4. Effects of very high hydrogen dilution at low temperature on hydrogenated amorphous silicon germanium;Journal of Non-Crystalline Solids;1998-05
5. Development of Stable a-Si/a-SiGe Tandem Solar Cell Submodules Deposited by a Very High Hydrogen Dilution at Low Temperature;MRS Proceedings;1998
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