Low-Field Colossal Magnetoresistance in Manganite Tunnel Junctions

Abstract

ABSTRACTLarge magnetoresistance values are obtained on tunnel junctions epitaxially deposited by pulsed-laser deposition and consisting of ferromagnetic manganite La0.67Sr0.33MnO3 electrodes separated by various tunnel barriers: SrTiO3, PrBaCu2.8Ga0.2O7 and CeO2. The magnetoresistance can be decomposed into a low-field and a high-field contribution. The latter is attributed to the presence of canted interfacial manganite phases, as confirmed by the temperature behaviour of the resistance. A low-field magnetoresistance ratio of 450% below 100 Oe is obtained on a sample with a SrTiO3 barrier, indicating a spin polarization value in excess of 0.83 for the manganite.