Author:
Min Kyu Sung,Atwater Harry A.
Abstract
AbstractGrowth and structural characterization of ultrathin, coherently strained oc-Sn/Si quantum well heterostructures have been performed. Severe Sn segregation to the surface during growth, which prevents growth of these structures at ordinary Si epitaxy temperatures, has been minimized by substrate temperature and growth rate modulations during molecular beam epitaxy. Single Sn/Si quantum wells grown with Sn coverage up to 1.4 ML have been verified to be pseudomorphic by transmission electron microscopy and X-ray rocking curve analysis. Similarly, pseudomorphic superlattices with up to 10 periods of 1 ML Sn/7.7 nm Si have been verified to be free of extended defects.
Publisher
Springer Science and Business Media LLC