Author:
Hovel Harold J.,McKoy T. E.,Mitcheli J. M.,Scilla G.,Moorea S. J.,Cardone F.
Abstract
ABSTRACTThe effects of tilt and rotation angle on implant channeling are explored for Si implants into (100)-oriented GaAs substrates using Monte Carlo simulations, SIMS profiling, capacitance profiling, and Hall measurements. It is shown that the 7° tilt angle often used to prevent axial channeling is not large enough, and 11–13° angles are required to obtain the sharpest and most reproducible implant profiles. Rotation angles have a much smaller effect on the profiles as long as the beam incidence is kept away from the < 110 > direction.
Publisher
Springer Science and Business Media LLC
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