Characterization Of APB's In GaP-Reference-Cited by-同舟云学术

Characterization Of APB's In GaP

Published:1996 Issue: Volume:442 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Cohen Dov,Carter C. Barry

Abstract

AbstractAntiphase boundaries in GaP crystals epitactically grown on Si (001) have been characterized using transmission electron microscopy. Convergent-beam electron diffraction was used to identify the antiphase-related grains. The antiphase boundaries were observed to adopt facets parallel to specific crystallographic orientations. Furthermore, stacking-fault-like contrast was observed along the interface suggesting that the domains may be offset from one another by a rigid-body lattice translation.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference13 articles.

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3. Determination of the lattice translation across antiphase boundaries

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