High-Temperature Reorientation Of Distortions In The Excited State Of The VGaTeAs Complexes In n-Type GaAs

Abstract

AbstractWe have investigated polarization of photoluminescence from the VGaTeAs complexes in n-GaAs induced through resonant excitation by polarized light. Experimental data in temperature range from 77 to 240 K were described by classic one-dipole approximation within the model of the VGaTeAs complex subjected to the Jahn-Teller distortion in the ground and excited states. It is shown that depolarization of photoluminescence at temperatures over ∼ 120 K may be explained by concurrent action of i) thermal emission and back capture of holes bound to the complexes in the excited state and ii) reorientation of complex distortion during a life of this state. The model parameters have been estimated.