Growth Induced Alignment Of The First Neighbor Shell Of CAs In AlxGa1−xAs

Abstract

AbstractWe have discovered a growth-induced alignment of the Al and Ga first neighbors of CAs, acceptors in AlxGa1−xAs grown by metalorganic molecular beam epitaxy. This growth induced alignment has been detected from the polarization dependence of the C atom's vibrational absorption bands that the alignment gives rise to. The alignment of the first neighbor shell of CAs also gives rise to aligned CAs-H complexes when the C is passivated by H. This leads to polarized H-stretching absorption bands which have also been observed. The growth-induced alignment provides information which helps us to assign the complicated CAsvib rational spectrum observed in the AlxGa1−xAs alloys.