Initial Stages in the Growth of Oxide Thin Films by CVD

Abstract

AbstractA technique has been developed for studying the early stages of heteroepitactic nucleation and growth of oxide thin films by TEM using direct deposition onto electron-transparent ceramic substrates. Observations of α-Fe2O3 island growth on four orientations of α-Al2O3 – (0001), {1102}, {1010}, and {1120} – are reported. Moir6 fringes and selected-area diffraction are used to show heteroepitactic growth. Island morphology is compared to known growth habits of hematite crystals. Preferential nucleation of islands at low-energy sites (e.g. surface steps) is also demonstrated.