Photon-Controlled Growth of Multilayered Structures-Reference-Cited by-同舟云学术

Photon-Controlled Growth of Multilayered Structures

Published:1987 Issue: Volume:103 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Lowndes Douglas H.,Geohegan D. B.,Eres D.,Mashburn D. N.,Pennycook S. J.

Abstract

ABSTRACTPulsed ArF excimer laser (193 nm) photolysis has been used to deposit entirely amorphous and mixed amorphous/polycrystalline superlattice structures containing Si, Ge and Si3N4. High resolution in situ optical reflectivity measurements were used to monitor and/or control deposition. Transmission electron microscope cross-section views demonstrate that amorphous superlattice structures having highly reproducible layer thicknesses (from about 50 to several hundred A), and sharp interlayer boundaries, can be deposited at low substrate temperatures under laser photolytic control.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference7 articles.

1. 1. See Eres D. , Lowndes D. H. , Geohegan D. B. , Mashburn D. N. and Pennycook S. J. , “Laser Photochemical Growth of Amorphous Silicon at Low Temperatures and Comparison with Thermal CVD,” Symposium B of this meeting.

2. Laser Photochemical Vapor Deposition of Ge Films (300 ≤ T ≤ 873 K) from GeH4: Roles of Ge2H6 and Ge

3. ArF laser photodissociation of NH3 at 193 nm: internal energy distributions in NH2 X̃2B1 and Ã2A1, and two-photon generatin of NH A 3Π and b 1Σ+

4. Photoionization and Total Absorption Cross Section of Gases. I. Ionization Potentials of Several Molecules. Cross Sections of NH3 and NO

5. A mass spectrometric study of mercury-photosensitized reactions of monosilane and ammonia mixtures: observation of silylated amines

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