950V, 8.7mohm-cm2 High Speed 4H-SiC Power DMOSFETs
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Published:2006
Issue:
Volume:911
Page:
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ISSN:0272-9172
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Container-title:MRS Proceedings
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language:en
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Short-container-title:MRS Proc.
Author:
Ryu Sei-Hyung,Jonas Charlotte,Heath Bradley,Richmond James,Agarwal Anant,Palmour John
Abstract
AbstractFabrication and characteristics of high voltage, high speed DMOSFETs in 4H-SiC are presented. The devices were built on 1.2×1016 cm-3 doped, 6 mm thick n-type epilayer grown on a n+ 4H-SiC substrate. A specific on-resistance of 8.7 mW-cm2 and a blocking voltage of 950 V were measured. Device characteristics were measured for temperatures up to 300oC. An increase of specific on-resistance by 35% observed at 300oC, when compared to the value at room temperature. This is due to a negative shift in MOS threshold voltage, which decreases the MOS channel resistance at elevated temperatures. This effect cancels out the increase in drift layer resistance due to a decrease in bulk electron mobility at elevated temperature, resulting in a temperature stable on-resistance. The device operation at temperatures up to 300 oC and high speed switching results are also reported in this paper.
Publisher
Springer Science and Business Media LLC
Subject
General Engineering
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3. Conductivity Anisotropy in Epitaxial 6H and 4H Sic
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