Author:
Lippold Gerd,Neumann Horst,Schindler Axel
Abstract
ABSTRACTWe report on a novel ion beam selenization process. The reactive chalcogen component Se and a significant part of the thermal energy needed for CIGS formation is delivered directly into the growing surface by a low energy Se ion beam from a broad beam ion source. This highly controllable technique with respect to ion energy, dose and uniformity and with scale- up capabilities can be used in two ways either for selenization of metallic Cu/(In,Ga) thin film stacks or in co-deposition. In the case of co-deposition the CIGS growth temperature can be reduced to < 400°CBesides the description of the method we present results of Se ion beam analysis and properties of CIGS thin films, produced by the novel selenization process.
Publisher
Springer Science and Business Media LLC
Cited by
8 articles.
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