Ion beam assisted deposition of Cu(In,Ga)Se2 films for thin film solar cells

Abstract

ABSTRACTWe report on a novel ion beam selenization process. The reactive chalcogen component Se and a significant part of the thermal energy needed for CIGS formation is delivered directly into the growing surface by a low energy Se ion beam from a broad beam ion source. This highly controllable technique with respect to ion energy, dose and uniformity and with scale- up capabilities can be used in two ways either for selenization of metallic Cu/(In,Ga) thin film stacks or in co-deposition. In the case of co-deposition the CIGS growth temperature can be reduced to < 400°CBesides the description of the method we present results of Se ion beam analysis and properties of CIGS thin films, produced by the novel selenization process.