Absorption and photoluminescence studies of lightly alloyed CdTe(S) and CdS(Te)

Abstract

ABSTRACTCdTe-rich and CdS-rich alloy films were deposited at temperatures less than 300C using an rf sputtering technique. Transmission-reflection and photoluminescence measurements were conducted to study the near-band edge properties of this ternary system for films of different compositions at room temperature and at 10K. Results were compared to data on defect states introduced in CdTe single crystal by annealing at several different overpressure conditions, including CdS and CdCl2 overpressures. A below-band-gap photoluminescence excitation technique was used to study systematically the effect of different steps in the production of the complete solar cell on band gap states of CdSxTe1−x alloys as well as pure binary constituents.