Integrated Piezoelectric and Pyroelectric Devices from Thin Film Ferroelectrics

Abstract

AbstractThin PZT films 1-4 μm in thickness prepared by sputtering or sol gel methods allow PZT films to be integrated with silicon technology to achieve piezoelectric or pyroelectric structures having small size or mass. Design criteria, materials and processing techniques for such devices are discussed, and the implementation of small size devices on silicon substrates is demonstrated. Factors of importance are the piezoelectric and pyroelectric characteristics achievable in the films, mechanical strength and fatigue, and the stability and compatibility of the films and electrodes with device fabrication procedures and operating conditions.