Author:
Sayer M.,Kumar C.V.R. Vasant,Barrow D.,Zou Li,Amm D.T.
Abstract
AbstractThin PZT films 1-4 μm in thickness prepared by sputtering or sol gel methods allow PZT films to be integrated with silicon technology to achieve piezoelectric or pyroelectric structures having small size or mass. Design criteria, materials and processing techniques for such devices are discussed, and the implementation of small size devices on silicon substrates is demonstrated. Factors of importance are the piezoelectric and pyroelectric characteristics achievable in the films, mechanical strength and fatigue, and the stability and compatibility of the films and electrodes with device fabrication procedures and operating conditions.
Publisher
Springer Science and Business Media LLC
Cited by
11 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献