Material Characterization by Contactless Photoconductivity Measurements

Abstract

AbstractTransient photoconductivity measurements with the time-resolved microwave conductivity (TRMC) method have been applied to three different types of semiconductors: hydrogenated amorphous silicon, single crystalline silicon and GaAs/GaAlAs multiple quantum well structures. Analysis of the signals in terms of charge carrier-lattice interaction points to an intimate relation between TRMC signals and intrinsic material properties. It is shown that the TRMC-technique is an excellent tool to characterize photosensitive materials.