Author:
Dutta P.S.,Gutmann R.J.,Charache G.W.,Wang C.A.
Abstract
AbstractThis paper presents some of the widely used characterization tools for antimonide based III-V compounds, focusing on characterization of defects that limit device operation. The effect of microstructure on the electro-optical properties of GaSb and GaInAsSb important in devices is emphasized.
Publisher
Springer Science and Business Media LLC