Author:
Williamson D.L.,Marr D.W.M.,Nelson B.P.,Iwaniczko E.,Yang J.,Yan B.,Guha S.
Abstract
ABSTRACTThe heterogeneity of a-Si:H and a-Si:D films has been probed on the nano-scale by small-angle neutron scattering (SANS). Films were deposited by two techniques, plasma-enhanced chemical-vapor deposition (PECVD) and hot-wire chemical-vapor deposition (HWCVD) using conditions that yield high-quality films and devices. Four samples were examined in a light-soaked state (AM1.5, 300 h) and then re-examined after annealing (190°C, 1 h) in-situ to look for any change in SANS associated with the Staebler-Wronski effect. No changes were observed in the SANS intensity to a precision that could have readily detected the 25% change reported in 1985 (Chenevas-Paule et al). Significant differences are observed in hydrogenated and deuterated films, as well as in the PECVD versus the HWCVD materials.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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